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| mm1z2b4~mm1zb75 silicon planar zener diodes features ? power dissipation: 500 mw ? zener voltage tolerance: 2% absolute maximum ratings (t a = 25 o c) parameter symbol value unit power dissipation p tot 500 mw junction temperature t j 150 o c storage temperature range t stg - 55 to + 150 o c characteristics at t a = 25 o c parameter symbol max. unit thermal resistance junction to ambient air r tha 340 o c/w forward voltage at i f = 10 ma v f 0.9 v anode 2 top view simplified outline sod-123 and symbol 1 2 pinning 1 pin cathode description 1 date:2011/05 www.htsemi.com semiconductor jinyu
characteristics at t a = 25 o c type marking code zener voltage range 1) dynamic impedance reverse leakage current v znom v l zt for v zt z zt (max.) at i z i r (max.) at v r ma v ? ma a v mm1z2b4 5y1 2.4 5 2.352?2.448 100 5 120 1 mm1z2b7 5z1 2.7 5 2.646?2.754 110 5 120 1 mm1z3b0 6a1 3.0 5 2.94?3.06 120 5 50 1 mm1z3b3 6b1 3.3 5 3.234?3.366 130 5 20 1 mm1z3b6 6c1 3.6 5 3.528?3.672 130 5 10 1 mm1z3b9 6d1 3.9 5 3.822?3.978 130 5 5 1 mm1z4b3 6e1 4.3 5 4.214?4.386 130 5 5 1 mm1z4b7 6f1 4.7 5 4.606?4.794 130 5 2 1 mm1z5b1 6g1 5.1 5 4.998?5.202 130 5 2 1.5 mm1z5b6 6h1 5.6 5 5.488?5.712 80 5 1 2.5 mm1z6b2 6j1 6.2 5 6.076?6.324 50 5 1 3 mm1z6b8 6k1 6.8 5 6.664?6.936 30 5 0.5 3.5 mm1z7b5 6l1 7.5 5 7.35?7.65 30 5 0.5 4 mm1z8b2 6m1 8.2 5 8.036?8.364 30 5 0.5 5 mm1z9b1 6n1 9.1 5 8.918?9.282 30 5 0.5 6 mm1zb10 6p1 10 5 9.8?10.2 30 5 0.1 7 MM1ZB11 6q1 11 5 10.78?11.22 30 5 0.1 8 mm1zb12 6r1 12 5 11.76?12.24 35 5 0.1 9 mm1zb13 6s1 13 5 12.74?13.26 35 5 0.1 10 mm1zb15 6t1 15 5 14.7?15.3 40 5 0.1 11 mm1zb16 6u1 16 5 15.68?16.32 40 5 0.1 12 mm1zb18 6w1 18 5 17.64?18.36 45 5 0.1 13 mm1zb20 6x1 20 5 19.6?20.4 50 5 0.1 15 mm1zb22 6y1 22 5 21.56?22.44 55 5 0.1 17 mm1zb24 6z1 24 5 23.52?24.48 60 5 0.1 19 mm1zb27 7a1 27 5 26.46?27.54 70 2 0.1 21 mm1zb30 7b1 30 5 29.4?30.6 80 2 0.1 23 mm1zb33 7c1 33 5 32.34?33.66 80 2 0.1 25 mm1zb36 7d1 36 5 35.28?36.72 90 2 0.1 27 mm1zb39 7e1 39 2.5 38.22?39.78 100 2 2 30 mm1zb43 7f1 43 2.5 42.14?43.86 130 2 2 33 mm1zb47 7g1 47 2.5 46.06?47.94 150 2 2 36 mm1zb51 7h1 51 2.5 49.98?52.02 180 2 1 39 mm1zb56 7j1 56 2.5 54.88?57.12 180 2 1 43 mm1zb62 7k1 62 2.5 60.76?63.24 200 2 0.2 47 mm1zb68 7l1 68 2.5 66.64?69.36 250 2 0.2 52 mm1zb75 7m1 75 2.5 73.5?76.5 300 2 0.2 57 1) v z is tested with pulses (20 ms). mm1z2b4~mm1zb75 2 date:2011/05 www.htsemi.com semiconductor jinyu package outline plastic surface mounted package; 2 leads sod-123 e mm unit a b c dehv all round d b c a a h h e p p e 1.15 1.05 0.6 0.5 0.135 0.100 2.7 2.6 1.65 1.55 3.9 3.7 0.2 o 5 mm1z2b4~mm1zb75 3 date:2011/05 www.htsemi.com semiconductor jinyu |
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